Browsing by Author "Westwood, D. I."
Now showing items 1-3 of 3
-
Article
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
Zervos, Matthew; Elliott, M.; Westwood, D. I. (1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
-
Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
Ke, M. L.; Chen, X.; Zervos, Matthew; Nawaz, R.; Elliott, M.; Westwood, D. I.; Blood, P.; Godfrey, M. J.; Williams, R. H. (1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
-
Article
Surface micro-roughness and transport properties of Si delta-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B
Zervos, Matthew; Elliott, M.; Westwood, D. I. (1999)We investigated the surface quality and electron transport properties of 200 Å GaAs/InxGa1-xAs/GaAs, 0.1≤x≤0.25, quantum well structures grown by molecular-beam epitaxy on GaAs (001) and (111)B, center delta-doped with Si ...